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semiconductor physics and devices basic principles-[4th]-[donald a neamen].pdf

semiconductor physics and devices  basic principles-[4th]-[donald a  neamen].pdf
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nea29583_index_738-762.indd 759nea29583_index_738-762.indd 759 12/13/10 2:24 PM12/13/10 2:24 PM758 IndexVVH11032gs, 423Vbi, 359VDS, 406–409, 414VDS(sat), 408, 582VSD, 418VSD(sat), 418Vacancy defect, 14, 16Vacancy-interstitial defect, 14Van Allen radiation belts, 475Van der Walls bond, 14Varacto Index 757Thermal voltage, 245Thermal-equilibrium concentration, 107, 123–127, 129Thermal-equilibrium density of electrons, 110Thermal-equilibrium electron concentration, 109, 135–139, 147Thermal-equi756 IndexSnapback breakdown, 465–468, 482, 690Snell’s law, 651SOAdefi ned, 680, 702power MOSFET, 687–688power transistors, 680Sodium (Na), 13–14Sodium chloride (NaCl), 12Solar cells, 624–632amorphous Index 755MOSFET (metal-oxide-semiconductor fi eld-effect transistor), 371–490nonequilibrium excess carriers, 192–240optical devices, 618–669pn junction diodes, 276–330pn junctions, 241–275power devic754 Indexpn junction diode, 322–330, 734quantum mechanics, 51–57, 730–731quantum theory of solids, 99–104, 731Schottky barrier diode, 364–369, 734–735semiconductor in equilibrium, 148–154, 731–732semi Index 753Quantization of particle energy, 38Quantized energies, 51, 59Quantum effi ciency, 645–646, 649–652Quantum mechanics, 25–57compared to classical mechanics, 33, 38, 43, 45, 80electron in free 752 Indexbasic structure, 242–243built-in potential barrier, 243–246, 267–268diode (See Pn junction diode)electric fi eld, 246–249, 251–254, 267equivalent circuit, 313–314glossary of terms, 268hyperab Index 751One-sided junctions, 256–258, 268One-sided MESFET, 578Open-base confi guration, 534–535

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